processes期刊版面费

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如果不选open，应该是不要版面费的，你可以询问一下编辑。 期刊名 semiconductor science and technology 出版周期: 月刊 中科院杂志分区 材料科学：综合分类下的 3 区期刊 近四年SCI 影响因子:2013年度 2012年度 2011年度 2010年度 206 921 723 323 出版社或管理机构 杂志由 IOP PUBLISHING LTD 出版或管理。 ISSN号：0268-1242 杂志简介/稿件收录要求 Subject Experimental and theoretical studies of the structural, electrical, optical and acoustical properties of bulk, low-dimensional and amorphous semiconductors; computational semiconductor physics; interface properties, including the physics and chemistry of heterojunctions, metal-semiconductor and insulator-semiconductor junctions; all multi-layered structures involving semiconductor Dopant Growth and preparation of materials, including both epitaxial ( molecular beam and chemical vapour methods) and bulk techniques; in situ monitoring of epitaxial growth processes, also included are appropriate aspects of surface science such as the influence of growth kinetics and chemical processing on layer and device Physics of semiconductor electronic and optoelectronic devices, including theoretical modelling and experimental demonstration; all aspects of the technology of semiconductor device and circuit Relevant areas of 'molecular electronics' and semiconductor structures incorporating Langmuir- Blodgett films; resists, lithography and metallization where they are concerned with the definition of small geometry The structural, electrical and optical characterization of materials and device Materials and device reliability: reliability evaluation of technologies; failure analysis and advanced analysis techniques such as SEM, E-beam, optical emission microscopy, acoustic microscopy techniques; liquid crystal techniques; noise measurement, reliability prediction and simulation; reliability indicators; failure mechanisms, including charge migration, trapping, oxide breakdown, hot carrier effects, electro-migration, stress migration; package- related failure mechanisms; effects of operational and environmental stresses on Papers will normally be categorized under one of four headings: electrical and optical properties, devices, crystal growth and materials, and
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